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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200205 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 HLB121D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121D is a medium power transistor designed for use in switching applications. TO-126ML Features * High breakdown voltage * Low collector saturation voltage * Fast switching speed Absolute Maximum Ratings (TA=25C) * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature .................................................................................................................................... +150 C * Maximum Power Dissipation Total Power Dissipation (TC=25C) .................................................................................................................... 10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 600 V BVCEO Collector to Emitter Voltage.................................................................................................................... 400 V BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V IC Collector Current (DC) ............................................................................................................................... 300 mA IC Collector Current (Pulse)............................................................................................................................ 600 mA IB Base Current (DC)........................................................................................................................................ 40 mA IB Base Current (Pulse).................................................................................................................................. 100 mA Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 Min. 600 400 6 8 10 Typ. Max. 10 10 10 400 750 1 36 Unit V V V uA uA uA mV mV V IC=100uA IC=10mA IE=10uA VCB=550V VCB=400V VEB=6V IC=50mA, IB=10mA IC=100mA, IB=20mA IC=50mA, IB=10mA VCE=10V, IC=10mA VCE=10V, IC=50mA *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions HLB121D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 100000 Spec. No. : HD200205 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 2/4 Saturation Voltage & Collector Current VCE(sat) @ IC=5IB 125 C o 25 C o Saturation Voltage (mV) 10000 hFE 10 75 C o 75 C 1000 o 125 C 100 o hFE @ VCE=10V 25 C o 1 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 25 C o Saturation Voltage (mV) 75 C 125 C o o VBE(sat) @ IC=5IB 100 0.1 1 10 100 1000 Collector Current-IC (mA) HLB121D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension A C D E H LB 1 2 1D Spec. No. : HD200205 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 3/4 Marking: L Pb Free Mark Pb-Free: " . " (Note) Normal: None I B 1 F H G M 2 3 Date Code Control Code Note: Green label is used for pb-free packing Pin Style: 1.Emitter 2.Collector 3.Base Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N Min. 7.74 10.87 0.88 1.28 3.50 2.61 13 1.18 2.88 0.68 3.44 1.88 0.50 Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51 *: Typical, Unit: mm K J N 3-Lead TO-126ML Plastic Package HSMC Package Code: D Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB121D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HD200205 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HLB121D HSMC Product Specification |
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